[SSD] EC 203 SOLID STATE DEVICES KTU B TECH QUESTIONS FOR SECOND YEAR [S3] STUDENTS | QUESTION BANK


APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY

[SSD] EC 203 SOLID STATE DEVICES KTU B TECH QUESTIONS FOR SECOND YEAR [S3] STUDENTS | QUESTION BANK,ktu solid state devices,ktu solid state devices questions,ktu solid state devices notes,ktu solid state devices textbooks,ktu solid state devices important questions,ktu solid state devices previous questions,ktu solid state devices s3 questions,solid state devices SSD Questions s3
SOLID STATE DEVICES QUESTION PAPERS


PART A


(Answer All Questions)

1. Derive an expression for the electron current in the n-type material of a forward biased p-n junction?

2. Define diffusion length of a hole? Mention the relation between carrier life time and diffusion length of hole?

3. Define luminescence? Mention different types of luminescence?

4. For a P+N junction diode, which region is heavily doped? Also prove with suitable equations, which region among P side depletion region or N side depletion will be greater?

5. Draw the energy band diagrams for a PN junction in a) equilibrium b) Forward biased c) Reverse biased cases?

PART B

(Answer Any Two Questions)

6. Derive the continuity equation?

7. Explain the quasi Fermi level with suitable equations and figures?

8. Derive the diode equation?

9. An abrupt Si p-n junction has Na=10^18 cm^-3 on one side and Nd=5*10^15 cm^-3 on the other side. 

The junction has a circular cross section with diameter of 10μm. 

Calculate contact potential, Xno, Xpo, depletionregion 
width(W), Q+ and €o(electric field)? Given Ɛr=11.8, Ɛ0=8.854*10^-14.

1 comment:

  1. Can you please give the answer keys of this?????
    amalunnikrishnan11@gmail.com

    ReplyDelete

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